Personnel Information


Uesugi Katsuhiro

The master's program in charge

Division of Information and Electronic Engineering

The doctoral program in charge

Division of Engineering

The department in charge

Department of Engineering

Job title

Associate Professor

E-mail Address

E-mail address

Research field 【 display / non-display

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

Keywords for Research Field 【 display / non-display

  • 電子材料、半導体

Degree 【 display / non-display

  • Doctor of Engineering

    Atomic-scale processes on silicon surfaces studied with scanning tunneling microscopy

Academic Society 【 display / non-display

  • 日本表面真空学会

  • 応用物理学会

  • The Japanese Sol-Gel Society




Purpose of Research



Summary of Research



Research Content

Features / Benefits of Research

1.Point of research 2.Research of novelty
  • 非混和性の強い材料でも、相分離させずに単結晶の作製が可能
  • 表面・界面制御により、半導体量子ドット構造の作製が可能
  • スピノーダル分解を利用したナノ物質の作製が可能
  • GaAsN(ガリウムヒ素窒素)系半導体混晶の研究
  • II-VI族、III-V族化合物半導体量子ドットの研究
  • 金属酸化物混晶半導体の研究
  • ナノシート・ナノワイヤー・ナノドットの作製
3.Primacy of Technology 4.Situation of patent-related
  • 任意の結晶構造、格子定数の結晶が作製可能
  • 広範囲でバンドギャップエンジニアリングが可能
  • GaAsNSe ノンアロイオーミック電極が可能
  • 水酸化物・水酸化物・酸窒化物半導体材料が作製可能
  • 特願2001−395421

Books 【 display / non-display

  • Dilute Nitride Semiconductors

    I. Suemune, K. Uesugi, S. Ganapathy,Elsevier Ltd.,MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum Dots,2004.12

  • Advances in the Understanding of Crystal Growth Mechanisms

    T. Yao, T. Komura, K. Uesugi and M. Yoshimura,Elsevier Science B.V.,Scanning tunneling microscope study of solid phase epitaxy processes on the Si(001)2x1 surface,1997.03

  • Growth and optical properties of wide-gap II-VI low dimensional semiconductors

    T. Yao, M. Fujimoto, K. Uesugi and S. Kamiyama,Plenum Publishing Corporation,MBE and ALE ofII-VI compounds: Growth processes and lattice strain in heteroepitaxy,1989.08

Papers 【 display / non-display

  • Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode

    Muhammad Hafiz Abu Bakar, Lam Mui Li, Khairul Anuar Mohamad, Fouziah Md Yassin, Chee Fuei Pien, Afishah Alias, Katsuhiro Uesugi,Advanced Science Letters,vol.23,(11),(p.11564 ~ 11566),2017.11

  • Metal-organic molecular beam epitaxy of GaAsNSe films using Ga droplets on GaP(001)

    Yuki Shimomura, Yosuke Igarashi, Shinji Kimura, Yuhei Suzuki, Yoshihiro Tada, Hisashi Fukuda, and Katsuhiro Uesugi,Japanese Journal of Applied Physics,vol.55,(8S1),2016.08

  • 液相中への縦波放射を利用したレイリー型表面弾性波センサーの開発

    小川 健吾,鳥越 俊彦,澤田 研,岩佐 達郎,永野 宏治,柴山 義行,夛田 芳広,植杉 克弘,福田 永,電気学会論文誌E(センサ・マイクロマシン部門誌),vol.135,(12),(p.490 ~ 495),2015.12

  • 縦波表面弾性波を用いた液相系センサーの動作特性

    小川健吾、山田真也、鳥越俊彦、澤田 研、岩佐達郎、杉山史一、夛田芳広、植杉克弘、福田 永,表面科学,vol.35,(6),(p.319 ~ 323),2014.06

  • Mixed P3HT/PCBM Organic Thin-Film Transistors: Relation between Morphology and Electrical Characteristics

    Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Bablu Kumar Gosh, Katsuhiro Uesugi, Hisashi Fukuda,J. Chem. Chem. Eng.,vol.8,(p.476 ~ 323),2014.05

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International conference proceedings 【 display / non-display

  • Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method

    Mui Li Lam, Muhammad Hafiz Abu Bakar, Wai Yip Lam, Afishah Alias, Abu Bakar Abd Rahman, Khairul Anuar Mohamad, Katsuhiro Uesugi,EPJ Web of Conferences,vol.162,Article Number:01061,2017.11

  • Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode

    11. MH. Abu Bakar, LM. Li, KA. Mohamad, FM. Yassin, CF. Pien, A. Alias, and K. Uesugi,ADVANCED SCIENCE LETTERS,vol.23,(11),(p.11564 ~ 11566),2017.11

  • Fabrication and characterization of 6, 13-bis (triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method

    Khairul Anuar Mohamad, Fara Naila Rusnan, Dzulfahmi Mohd Husin Seria, IsmailSaad, Afishah Alias, Uesugi Katsuhiro, Fukuda Hisashi,AIP Conf. Proc.,(p.020003 ~ ),2015.08,Negeri Sembilan

  • Electrical and structural characterization of Zn doped CuGaO2 films

    Afishah Alias, Khairul Anuar Mohamad, Katsuhiro Uesugi, Hiroshi Fukuda,2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM),(p.183 ~ 185),2013.09

  • Effect of [6, 6]-Phenyl-C 61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors

    Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Bablu Gosh, Katsuhiro Uesugi, Hiroshi Fukuda,2013 IEEE RegionalSymposium on Microand Nanoelectronics (RSM),(p.179 ~ 182),2013.09

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Editorial and Commentary 【 display / non-display

  • 走査トンネル顕微鏡によるシリコン固相エピタキシー過程の観察

    植杉克弘,小村琢治,吉村雅満,八百隆文,表面科学,vol.16,(2),(p.105 ~ 112),1995.02

Research reports 【 display / non-display

  • 原子層堆積法を用いた三次元微細構造の作製


  • ペロプスカイト太陽電池の高効率化


  • 次世代高性能シリコン薄膜デバイス製造に向けた低温シリコン膜の研究開発

    福田 永,植杉 克弘,城 尚志,室蘭工業大学地域共同研究開発センター研究報告,(24),(p.1 ~ 3),2014.02

  • 次世代高性能シリコンデバイス製造に向けた新規プロセスの研究開発

    福田 永,植杉 克弘,城 尚志,室蘭工業大学地域共同研究開発センター研究報告,(24),(p.4 ~ 6),2014.02

  • 次世代表面弾性波デバイス製造に向けた微細加工技術に関する研究

    植杉克弘,小川健吾,福田永,室蘭工業大学地域共同研究開発センター研究報告,(21),(p.21 ~ 23),2012.02

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Presentaion at conference, meeting, etc. 【 display / non-display

  • Growth temperature dependence of nanosheet structures on oriented GaOOH gel film surfaces

    Katsuhiro Uesugi, Keita Suzuki, Naoya Kumagai, Yuxiao Pang,Annual Meeting of the Japan Society of Vacuum and Surface Science 2023,JVSS 2023 program PDF for print,2023.10.31,Nagoya,Japan

  • ナローバンドギャップCu2Oナノドット薄膜の作製

    熊谷直哉, 植杉克弘,日本ゾル-ゲル学会第21回討論会,日本ゾル-ゲル学会,日本ゾル-ゲル学会第21回討論会予稿集,2023.07.13,愛知,Japan

  • Effects of Annealing on Sol-gel Derived Cu2O Films

    Katsuhiro UESUGI, Naoya KUMAGAI, Shinsuke SUZUKI, Yuxiao PANG,International Conference on Materials for Advance Technologies,Materials Research Society of Singapore,IUMRS-ICAM & ICMAT 2023,2023.06.26,Singapore,Singapore

  • Growth of Nanosheet Structures on Gallium Oxide Hydroxide Gel Surfaces

    Katsuhiro UESUGI, Naoya KUMAGAI, Ryuya MOMIYAMA, Keita SUZUKI, Yuto IKEDA, Yuxiao PANG,International Conference on Materials for Advance Technologies,Materials Research Society of Singapore,IUMRS-ICAM & ICMAT 2023,2023.06.26,Singapore,Singapore

  • Characterization of GaOOH Films Prepared by Two-dimensional Sol-gel Process

    Katsuhiro Uesugi, Naoya Kumagai, and Yuxiao Pang,THE 22ND INTERNATIONAL VACUUM CONGRESS IVC-22,IVC-22 Scientific Program,2022.09.11,Sapporo,Japan

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Class subject in charge 【 display / non-display

  • 電磁気学基礎(C・Dクラス)


  • 半導体工学(夜間・電気)


  • 電磁気学基礎


  • ベクトル解析(機航情電・夜)(特設・夜間主)


  • 基礎電気回路(再履修特設クラス)


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